{"product_id":"abb-3bhe014105r0001-5shx26l4510-5sxe05-0154-igct-module","title":"ABB 3BHE014105R0001 5SHX26L4510 5SXE05-0154 IGCT Module","description":"\u003cp\u003eThe \u003cstrong\u003eABB 5SHY3545L0020 3BHE014105R0001\u003c\/strong\u003e, also cataloged as the \u003cstrong\u003e5SHY3545L0020\u003c\/strong\u003e IGCT Module, operates as a dedicated hardware component for high-power semiconductor switching within power generation and electrical drive platforms. The device executes reverse-conducting integrated gate-commutated thyristor (RC-IGCT) routines natively at the machinery tier, managing a repetitive peak off-state voltage of 4500 V and a permanent DC link voltage of 2800 V. It balances high snubberless turn-off ratings with a simple control interface, using optical feedback lines to register state changes across medium frequency networks.\u003c\/p\u003e\n\u003ch3\u003eHardware Specifications\u003c\/h3\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParameter\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSpecification\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eModel\u003c\/td\u003e\n\u003ctd\u003e5SHY3545L0020 3BHE014105R0001 5SXE05-0154\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBrand\u003c\/td\u003e\n\u003ctd\u003eABB\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOrigin\u003c\/td\u003e\n\u003ctd\u003eSwitzerland (ABB Switzerland Ltd. Semiconductors)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWeight\u003c\/td\u003e\n\u003ctd\u003eHeavy-duty press-pack assembly dependent\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDimensions\u003c\/td\u003e\n\u003ctd\u003eStandard structural press-pack format\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Temp\u003c\/td\u003e\n\u003ctd\u003e0 to 125 deg C (Junction operating temperature)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePower Consumption\u003c\/td\u003e\n\u003ctd\u003eGate Unit consumption: Max 100 W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eProduct Type\u003c\/td\u003e\n\u003ctd\u003eReverse Conducting Integrated Gate-Commutated Thyristor (RC-IGCT)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eProduct Code\u003c\/td\u003e\n\u003ctd\u003e5SHX 26L4510\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRepetitive Peak Off-State Voltage (VDRM)\u003c\/td\u003e\n\u003ctd\u003e4500 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePermanent DC Link Voltage (VDC-link)\u003c\/td\u003e\n\u003ctd\u003e2800 V (for 100 FIT failure rate)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGCT Continuous Current Ratings\u003c\/td\u003e\n\u003ctd\u003eMax Average: 1010 A \/ Max RMS: 1590 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGCT Non-Repetitive Surge Current (ITSM)\u003c\/td\u003e\n\u003ctd\u003e17 x 10^3 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGCT On-State Voltage Drop (VT)\u003c\/td\u003e\n\u003ctd\u003e2.3 V to 2.95 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-On Parameters\u003c\/td\u003e\n\u003ctd\u003eDelay Time (tdon): 3.5 us \/ Energy per pulse (Eon): 0.85 J \/ Critical di\/dt: 100 A\/us\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode Continuous Current Ratings\u003c\/td\u003e\n\u003ctd\u003eMax Average: 390 A \/ Max RMS: 620 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode Non-Repetitive Surge Current (IFSM)\u003c\/td\u003e\n\u003ctd\u003e10.6 x 10^3 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode On-State Voltage Drop (VF)\u003c\/td\u003e\n\u003ctd\u003e3.54 V to 5.4 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode Reverse Recovery Parameters\u003c\/td\u003e\n\u003ctd\u003eRecovery Current (IRM): 900 A \/ Recovery Charge (Qrr): 2800 uC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Unit Input Requirements\u003c\/td\u003e\n\u003ctd\u003eVoltage (VGIN,RMS): 28 V to 40 V \/ Min Power-Up Current (IGIN): 2.1 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance (Junction-to-Case)\u003c\/td\u003e\n\u003ctd\u003eGCT: 12.6 K\/kW \/ Diode: 26 K\/kW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStorage Temperature Range\u003c\/td\u003e\n\u003ctd\u003e-40 to 60 deg C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch3\u003eProfinet \/ EtherNet\/IP Deterministic Networks\u003c\/h3\u003e\n\u003cp\u003eThe high-power semiconductor module isolates its fast turn-on delay time parameters from the slower control backplane cycles via localized optical interfaces. Maintaining firmware flash compatibility across matching drive excitation control blocks allows the gate unit to supply the continuous 2.1 A power-up baseline current without introducing voltage dropouts to the core power link. Diagnostic status feedback paths map directly from the integrated gate unit to host Profinet \/ EtherNet\/IP deterministic networks, maintaining sub-millisecond execution tracking of junction operating temperatures and blocking limits.\u003c\/p\u003e\n\u003ch3\u003eFrequently Asked Questions\u003c\/h3\u003e\n\u003cp\u003eQ: What are the backplane current and power limits when initializing the integrated gate unit?\u003c\/p\u003e\n\u003cp\u003eA: The gate unit requires an absolute minimum current (IGIN) of 2.1 A rms within a voltage window of 28 V to 40 V to power up its internal driving logic. Total steady-state power consumption (PGIN) peaks at 100 W under maximum medium frequency operating loads.\u003c\/p\u003e\n\u003cp\u003eQ: Can this module be hot-swapped while the 2800 VDC permanent link is isolated but auxiliary control loops are energized?\u003c\/p\u003e\n\u003cp\u003eA: No. The press-pack device requires precise mechanical force distribution and complete de-energization of both the 4500 V blocking paths and the 28 V to 40 V gate supply lines before servicing. Attempting removal under active auxiliary power will permanently damage the optical status feedback components.\u003c\/p\u003e\n\u003ch3\u003eField Installation Guidelines\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eMechanical Clamping Precision\u003c\/strong\u003e: Mount the module within an approved press-pack frame that ensures parallel pressure distribution over the pole faces to satisfy the 12.6 K\/kW GCT thermal resistance parameters.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eGate Unit Supply Cable Routing\u003c\/strong\u003e: Keep the auxiliary AC or DC power cables feeding the gate unit separate from high-current motor phases or high-voltage lines to prevent electromagnetic noise induction.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eOptical Isolation Line Care\u003c\/strong\u003e: Route the fiber optic status feedback lines with a bend radius that strictly follows industrial standards to eliminate signal degradation or pulse distortion during sub-microsecond switching operations.\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"ABB","offers":[{"title":"Default Title","offer_id":53047698817333,"sku":"3BHE014105R0001 5SHX26L4510 5SXE05-0154","price":66.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0973\/7630\/5461\/files\/3BHE014105R00015SHY3545L00205SXE080166_1410d3bb-b527-4015-80aa-1138550c8f47.png?v=1782727221","url":"https:\/\/www.5gplc.com\/products\/abb-3bhe014105r0001-5shx26l4510-5sxe05-0154-igct-module","provider":"High Five PLC Solution Limited","version":"1.0","type":"link"}